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| ST700CLPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 910 A FEATURES * Center amplifying gate * Metal case with ceramic insulator * International standard case TO-200AC (B-PUK) * Lead (Pb)-free TO-200AC (B-PUK) RoHS COMPLIANT * Designed and qualified for industrial level TYPICAL APPLICATIONS PRODUCT SUMMARY IT(AV) 910 A * DC motor controls * Controlled DC power supplies * AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS VALUES 910 Ths 55 1857 IT(RMS) Ths 50 Hz ITSM 60 Hz 50 Hz 60 Hz VDRM/VRRM tq TJ Typical 25 15 700 A 16 400 1232 1125 1200 to 2000 150 - 40 to 125 V s C kA2s UNITS A C A C I2 t ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 12 ST700C..L 16 18 20 VDRM/VRRM, MAXIMUM REPETITIVE PEAK IDRM/IRRM MAXIMUM VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM AND OFF-STATE VOLTAGE V mA V 1200 1600 1800 2000 1300 1700 1900 2100 80 Document Number: 94413 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 ST700CLPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 910 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at heatsink temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave double side (single side) cooled DC at 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Typical latching current I2t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 910 (355) 55 (85) 1857 15 700 16 400 13 200 Sinusoidal half wave, initial TJ = TJ maximum 13 800 1232 1125 871 795 12 321 1.00 1.13 0.40 0.35 1.80 600 1000 kA2s V kA2s A UNITS A C t = 0.1 to 10 ms, no voltage reapplied (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum Ipk = 2000 A, TJ = TJ maximum, tp = 10 ms sine pulse TJ = 25 C, anode supply 12 V resistive load m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time Typical turn-off time SYMBOL dI/dt td tq TEST CONDITIONS Gate drive 20 V, 20 , tr 1 s TJ = TJ maximum, anode voltage 80 % VDRM Gate current 1 A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s VALUES 1000 1.0 s 150 UNITS A/s BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum linear to 80 % rated VDRM TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 80 UNITS V/s mA www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94413 Revision: 11-Aug-08 ST700CLPbF Series Phase Control Thyristors Vishay High Power Products (Hockey PUK Version), 910 A TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage SYMBOL PGM PG(AV) IGM + VGM - VGM TEST CONDITIONS TJ = TJ maximum, tp 5 ms TJ = TJ maximum, f = 50 Hz, d% = 50 TJ = TJ maximum, tp 5 ms TJ = TJ maximum, tp 5 ms TJ = - 40 C DC gate current required to trigger IGT TJ = 25 C TJ = 125 C TJ = - 40 C DC gate voltage required to trigger VGT TJ = 25 C TJ = 125 C DC gate current not to trigger IGD TJ = TJ maximum DC gate voltage not to trigger VGD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode-to-cathode applied 200 100 50 2.5 1.8 1.1 10 VALUES TYP. MAX. UNITS 10.0 2.0 3.0 20 5.0 200 3.0 - W A V mA V mA 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink SYMBOL TJ TStg RthJ-hs DC operation single side cooled DC operation double side cooled DC operation single side cooled DC operation double side cooled TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.073 0.031 0.011 0.006 14 700 (1500) 255 See dimensions - link at the end of datasheet N (kg) g K/W UNITS C Maximum thermal resistance, case to heatsink Mounting force, 10 % Approximate weight Case style RthC-hs TO-200AC (B-PUK) RthJ-hs CONDUCTION CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION SINGLE SIDE 0.009 0.011 0.014 0.020 0.036 DOUBLE SIDE 0.009 0.011 0.014 0.020 0.036 RECTANGULAR CONDUCTION SINGLE SIDE 0.006 0.011 0.015 0.021 0.036 DOUBLE SIDE 0.006 0.011 0.015 0.021 0.036 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Document Number: 94413 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 ST700CLPbF Series Vishay High Power Products Maximum Allowable Heatsink T emperature (C) 130 120 110 100 90 Conduction Angle Phase Control Thyristors (Hockey PUK Version), 910 A Maximum Allowable Heatsink T emperature (C) 130 120 110 100 90 80 70 60 50 40 30 20 0 400 800 1200 30 60 90 120 180 DC 1600 2000 Conduction Period S 700C..L S T eries (S ingle S Cooled) ide RthJ-hs(DC) = 0.073 K/ W S 700C..L S T eries (Double S Cooled) ide RthJ-hs(DC) = 0.031 K/ W 80 70 60 50 40 0 100 200 300 400 500 600 700 Average On-s tate Current (A) Fig. 1 - Current Ratings Characteristics 30 60 90 120 180 Average On-s tate Current (A) Fig. 4 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) 2800 2400 2000 1600 1200 800 400 0 0 200 400 600 800 1000 1200 Average On-state Current (A) Fig. 5 - On-State Power Loss Characteristics Maximum Average On-s tate Power Los (W) s 3500 3000 2500 2000 RMSLimit 1500 Conduction Period Conduction Angle Maximum Allowable Heatsink T emperature (C) 130 120 110 100 90 80 70 60 50 40 30 20 0 200 30 S 700C..L S T eries (S ingle S Cooled ) ide RthJ-hs(DC) = 0.073 K/ W 180 120 90 60 30 RMSLimit Conduction Period 60 90 120 180 DC 800 1000 S 700C..L S T eries T = 125C J 400 600 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics Maximum Allowable Heatsink T emperature (C) 130 120 110 100 90 80 70 60 50 40 30 20 0 200 30 S 700C..L S T eries (Double S Cooled) ide RthJ-hs(DC) = 0.031 K/ W DC 180 120 90 60 30 Conduction Angle 1000 500 0 0 400 800 1200 1600 2000 Average On-state Current (A) Fig. 6 - On-State Power Loss Characteristics S 700C..L S T eries T = 125C J 60 90 120 180 400 600 800 1000 1200 Average On-state Current (A) Fig. 3 - Current Ratings Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94413 Revision: 11-Aug-08 ST700CLPbF Series Phase Control Thyristors Vishay High Power Products (Hockey PUK Version), 910 A Peak Half S Wave On-state Current (A) ine Peak Half S Wave On-state Current (A) ine 14000 13000 12000 11000 10000 9000 8000 7000 6000 1 10 100 Numb er Of Eq ual Amplitud e Half Cycle Current Pulses (N) At Any Rated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 125C J @60 Hz 0.0083 s @50 Hz 0.0100 s 16000 15000 Maximum Non Repetitive S urge Current Versus Pulse T rain Duration. Control Of Conduc tion May Not Be Maintained. 14000 Initial T = 125C J No Voltage Reapplied 13000 Rated VRRM Reapplied 12000 11000 10000 9000 8000 7000 S 700C..L S T eries S 700C..L S T eries 6000 0.01 0.1 1 Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 10000 Instantaneous On-state Current (A) T = 25C J Pulse T rain Duration (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled T = 125C J 1000 S 700C..L S T eries 100 0.5 1 1.5 2 2.5 3 3.5 4 Instantaneous On-state Voltage (V) Fig. 9 - On-State Voltage Drop Characteristics 0.1 T rans ient T hermal Impedance Z thJ-hs (K/ W) S 700C..L S T eries 0.01 S teady S te Value ta R thJ-hs = 0.073 K/ W (S ingle S ide Cooled) RthJ-hs = 0.031 K/ W (Double S ide Cooled) (DC Operation) 0.001 0.001 0.01 0.1 S quare Wave Puls Duration (s) e 1 10 Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Document Number: 94413 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 ST700CLPbF Series Vishay High Power Products 100 Instantaneous Gate Voltage (V) Phase Control Thyristors (Hockey PUK Version), 910 A R ectangular gate pulse a) R ecommended load line for rated di/ dt : 20V, 10ohms; tr<=1 s b) R ecommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 s (b) T j=-40 C (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a) tp tp tp tp = 4ms = 2ms = 1ms = 0.66ms T j=25 C T j=125 C 1 VGD IGD 0.1 0.001 0.01 (1) (2) (3) (4) Device: S 700C..L S T eries 0.1 1 Frequenc y Limited by PG(AV) 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE Device code ST 1 1 2 3 4 5 6 7 70 2 - 0 3 C 4 20 5 L 6 1 7 8 PbF 9 Thyristor Essential part number 0 = Converter grade C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) L = PUK case TO-200AC (B-PUK) 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) 8 9 - Critical dV/dt: Lead (Pb)-free None = 500 V/s (standard selection) L = 1000 V/s (special selection) LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95076 www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94413 Revision: 11-Aug-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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